型号:

PSMN1R6-30BL,118

RoHS:无铅 / 符合
制造商:NXP Semiconductors描述:MOSFET N CH 30V 100A D2PAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
PSMN1R6-30BL,118 PDF
标准包装 800
系列 -
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 100A
开态Rds(最大)@ Id, Vgs @ 25° C 1.9 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大) 2.15V @ 1mA
闸电荷(Qg) @ Vgs 212nC @ 10V
输入电容 (Ciss) @ Vds 12493pF @ 15V
功率 - 最大 306W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 D2PAK
包装 带卷 (TR)
其它名称 568-9481-2
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